NDLI: A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

Content Provider	IEEE Xplore Digital Library
Author	Meneghini, M. Bertin, M. dal Santo, G. Stocco, A. Chini, A. Marcon, D. Malinowski, P.E. Mura, G. Musu, E. Vanzi, M. Meneghesso, G. Zanoni, E.
Copyright Year	2012
Description	Author affiliation: University of Cagliari - DIEE, Italy (Mura, G.; Musu, E.; Vanzi, M.) \|\| Department of Information Engineering, University of Modena and Reggio Emilia, Italy (Chini, A.) \|\| imec, Kapeldreef 75, Leuven, Belgium (Marcon, D.; Malinowski, P.E.) \|\| Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35135 Padova, Italy (Meneghini, M.; Bertin, M.; dal Santo, G.; Stocco, A.; Meneghesso, G.; Zanoni, E.)
Abstract	With this paper we report on an extensive analysis of the degradation of AlGaN/GaN Schottky diodes, submitted to reverse-bias stress tests. The analysis is based on combined electrical measurements and 2D simulation. Results indicate that stress may induce a gradual increase in the leakage current of the devices. Capacitance-Voltage investigation was used as a tool for the analysis of the modifications in device structure generated during the stress tests. We demonstrate a new failure mechanism which consist in the formation of donor-like traps on the GaN-side of the AlGaN/GaN interface, and can explain the observed increase in diode leakage. 2D simulation was used to support the hypothesis on degradation, and to extrapolate the parameters of the trap responsible for the degradation process.
File Size	267095
File Format	PDF
ISBN	9781467348720
ISSN	2156017X
e-ISBN	9781467348713
e-ISBN	9781467348706
DOI	10.1109/IEDM.2012.6479035
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Aluminum gallium nitride Stress Degradation HEMTs MODFETs Leakage current
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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