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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Seong-Geon Park Min Kyu Yang Hyunsu Ju Dong-Jun Seong Jung Moo Lee Eunmi Kim Seungjae Jung Lijie Zhang Yoo Cheol Shin In-Gyu Baek Jungdal Choi Ho-Kyu Kang Chilhee Chung |
| Copyright Year | 2012 |
| Description | Author affiliation: Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd. San #16, Banwol-Dong, Hwasung-City, Kyeonggi-Do, Korea, 447-701 (Seong-Geon Park; Min Kyu Yang; Hyunsu Ju; Dong-Jun Seong; Jung Moo Lee; Eunmi Kim; Seungjae Jung; Lijie Zhang; Yoo Cheol Shin; In-Gyu Baek; Jungdal Choi; Ho-Kyu Kang; Chilhee Chung) |
| Abstract | A non-linear RRAM cell with sub-1μA ultralow operating current has been successfully fabricated for high density vertical ReRAM (VRRAM) applications. A uniform and reproducible low power resistive switching was achieved by engineering transition metal oxides and imposing thin insulating layer as a tunnel barrier. The non-linear I-V characteristics ensure the possible incorporation of RRAM cell into high density cross-type array structure including VRRAM. By varying the current compliance, a multi level switching behavior was obtained. Moreover, excellent endurance of more than $10^{7}$ cycles without read disturbance for up to $10^{4}$ seconds was demonstrated. |
| File Size | 957767 |
| File Format | |
| ISBN | 9781467348720 |
| ISSN | 2156017X |
| e-ISBN | 9781467348713 |
| e-ISBN | 9781467348706 |
| DOI | 10.1109/IEDM.2012.6479084 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-12-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Switches Arrays Resistance Electrodes Metals Flash memory Writing |
| Content Type | Text |
| Resource Type | Article |
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