NDLI: New observations on AC NBTI induced dynamic variability in scaled high-κ/Metal-gate MOSFETs: Characterization, origin of frequency dependence, and impacts on circuits

Content Provider	IEEE Xplore Digital Library
Author	Changze Liu Pengpeng Ren Runsheng Wang Ru Huang Jiaojiao Ou Qianqian Huang Jibin Zou Jianping Wang Jingang Wu Shaofeng Yu Hanming Wu Shiuh-Wuu Lee Yangyuan Wang
Copyright Year	2012
Description	Author affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China (Changze Liu; Pengpeng Ren; Runsheng Wang; Ru Huang; Jiaojiao Ou; Qianqian Huang; Jibin Zou; Yangyuan Wang) \|\| Semiconductor Manufacturing International Corporation (SMIC), Shanghai 201203 and Beijing 100176, China (Jianping Wang; Jingang Wu; Shaofeng Yu; Hanming Wu; Shiuh-Wuu Lee)
Abstract	In this paper, the frequency dependence of the dynamic variation induced by AC NBTI aging in scaled high-κ/metal-gate devices are experimentally studied for the first time. Challenges in comprehensively characterizing AC NBTI induced variation are addressed by the modified method. The additional variation source in AC NBTI, originating from the variations among each AC clock cycle, is found to be non-negligible and thus should be included in predicting circuit stability. With increasing AC frequency, the mean value (μ) of the Vth shift (ΔVth) is reduced as expected; however, the variation (σ) of ΔVth is almost unchanged, which surprisingly disagrees with the conventional model predicting the reduced variation. The origin of this new observation is found due to the competitive impacts of the activated trap number and the trap occupancy probability during device aging. Taken clock-CCV and frequency dependence into account, the impacts of AC NBTI on the SRAM cell stability can be evaluated in terms of both degradation and variation. The results are helpful for the future variability-aware circuit design.
File Size	779534
File Format	PDF
ISBN	9781467348720
ISSN	2156017X
e-ISBN	9781467348713
e-ISBN	9781467348706
DOI	10.1109/IEDM.2012.6479075
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Clocks Aging Stress Frequency dependence Time-frequency analysis Circuit stability
Content Type	Text
Resource Type	Article

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