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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jong-Ho Bae Injun Hwang Jong-Min Shin Hyuck-In Kwon Chan Hyeong Park Jongbong Ha JaeWon Lee Hyoji Choi Jongseob Kim Jong-Bong Park Jaejoon Oh Jaikwang Shin U-In Chung Jong-Ho Lee |
| Copyright Year | 2012 |
| Description | Author affiliation: School of EEE, Chung-Ang University, Seoul 156-756, Korea (Hyuck-In Kwon) || School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea (Jong-Ho Bae; Jong-Min Shin; Jong-Ho Lee) || Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, San 14, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-712, Korea (Injun Hwang; Jongbong Ha; JaeWon Lee; Hyoji Choi; Jongseob Kim; Jong-Bong Park; Jaejoon Oh; Jaikwang Shin; U-In Chung) || Dept. of ECE, Kwangwoon University, Seoul 139-701, Korea (Chan Hyeong Park) |
| Abstract | Traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT with SiO2 gate dielectric were characterized. Hysteresis in ID-VG was observed at elevated temperature (∼120 $^{o}C)$ due to the traps. To understand the traps, current transient in drain was investigated at given gate and drain pulses with different temperatures. Two groups of time constants were extracted: one is nearly constant and the other is decreased with temperature. Extracted activation energies from the drain current transients with temperature are 0.66 eV and 0.73 eV, respectively, for given gate and drain pulses. Using extracted exponential trap density profile from frequency dependent conductance method [4], we could understand C-V behavior with frequency. It was shown that traps inside AlGaN layer are a main cause for the decrease of capacitance at high frequency in inversion region. The pulsed I-V characteristics also show frequency dependence. |
| File Size | 1076341 |
| File Format | |
| ISBN | 9781467348720 |
| ISSN | 2156017X |
| e-ISBN | 9781467348713 |
| e-ISBN | 9781467348706 |
| DOI | 10.1109/IEDM.2012.6479034 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-12-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates Aluminum gallium nitride Gallium nitride Transient analysis Electron traps Frequency dependence Capacitance-voltage characteristics |
| Content Type | Text |
| Resource Type | Article |
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