NDLI: Surface trapping effects observed in AlGaN/GaN HFETs and heterostructures

Content Provider	IEEE Xplore Digital Library
Author	Koley, G. Tilak, V. Ho-Young Cha Eastman, L.F. Spencer, M.G.
Copyright Year	2002
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA (Koley, G.; Tilak, V.; Ho-Young Cha; Eastman, L.F.; Spencer, M.G.)
Abstract	We have observed very slow surface potential transients in AlGaN/GaN HFETs induced by high drain and gate bias stresses. The surface potential has been observed to change as much as 2.5 V near the gate. It is proposed that the change in surface potential is caused by electrons that tunnel from the gate and get trapped at the surface states. The increase in the net negative charge at the surface raises the surface barrier, which in turn reduces the 2DEG concentration. Simultaneous measurements of surface electrostatic potential and drain current indicate that the transients have similar transient responses and are therefore related. A spatial map of the surface potential change after stress with respect to time shows that maximum changes occur close to the gate. Exposure to UV laser light completely eliminates the transients, while large reduction in transient magnitude has been observed for devices passivated with SiN/sub x/. Contrary to the gate and drain stress, UV laser exposure of AlGaN/GaN heterostructure samples has been observed to reduce the surface barrier, which slowly increases following a stretched exponential type transient after the laser is switched off. Such an observation is explained by the creation of electron-hole pairs, which decrease the net charge dipole across the AlGaN barrier and lower the barrier. The transient response is modeled by thermionic emission of electrons from the interface, which recombine with the holes trapped at the surface.
Sponsorship	IEEE Electron Devices Soc. IEEE Microwave Theory & Techniques Soc. Office of Naval Res. Air Force Office of Sci. Res. Aixtron Corp
Starting Page	470
Ending Page	476
File Size	537614
Page Count	7
File Format	PDF
ISBN	0780374789
DOI	10.1109/LECHPD.2002.1146789
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs MODFETs Stress Electron traps Current measurement Electrostatic measurements Silicon compounds Surface emitting lasers
Content Type	Text
Resource Type	Article

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