NDLI: Impact of gate stack on the stability of normally-Off AlGaN/GaN power switching HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Kaplar, R.J. Dickerson, J. DasGupta, S. Atcitty, S. Marinella, M.J. Khalil, S.G. Zehnder, D. Garrido, A.
Copyright Year	2014
Description	Author affiliation: Sandia Nat. Labs. Albuquerque, Albuquerque, NM, USA (Kaplar, R.J.; Dickerson, J.; DasGupta, S.; Atcitty, S.; Marinella, M.J.) \|\| HRL Labs. LLC, Malibu, CA, USA (Khalil, S.G.; Zehnder, D.; Garrido, A.)
Abstract	We have examined the response of AlGaN/GaN power switching HEMTs to electrical bias stress. Three different gate stack structures were studied. In devices containing a ~ 5 nm thick AlGaN layer in the gate stack, both positive and negative shifts in the threshold voltage were observed following high blocking voltage stress, consistent with a short initial period of electron trapping followed by a longer period of de-trapping. Correlated changes in reverse bias leakage current were also observed, although this also occurred in devices containing only residual AlGaN in the gate stack. The data have been explained by a field-enhanced emission model in which an electron trapping to de-trapping transition occurs. The exact nature of the transition is found to be sensitive to a variety of parameters including trap energy, geometry, and initial and boundary conditions.
Starting Page	209
Ending Page	212
File Size	1101058
Page Count	4
File Format	PDF
ISBN	9781479929177
ISSN	1943653X
e-ISBN	9781479929184
DOI	10.1109/ISPSD.2014.6856013
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Aluminum gallium nitride Stress Leakage currents Electron traps HEMTs field plate AlGaN/GaN HEMT power switching reliability electron trapping gate stack
Content Type	Text
Resource Type	Article

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