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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lihua Wu Xiaozhong Zhang |
| Copyright Year | 1965 |
| Abstract | The transition between positive and negative magnetoresistance (MR) is observed for Fe-doped amorphous carbon film/n-silicon (a-C:Fe/Si) heterojunctions. The sign of the MR changes as the applied bias voltage and temperature are changing. The MR transition voltage decreases from 0.2 to 0.06 V when temperature increases from 220 to 280 K. The transition from positive MR to negative MR is found to be accompanied by a decrease in slope of log(I) ~ log(V) plot. This phenomenon may be related to holes and electrons having different magnetic field responses. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 3488 |
| Ending Page | 3490 |
| Page Count | 3 |
| File Size | 287792 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 45 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Magnetoresistance Heterojunctions Amorphous materials Semiconductor films Substrates Silicon Voltage Temperature Iron Carbon dioxide transition negative MR positive MR |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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