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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shams, N.N. Matsumoto, M. Morisako, A. |
| Copyright Year | 1965 |
| Abstract | Si/sub 3/N/sub 4/, a new substrate as well as thermally oxidized SiO/sub 2//Si wafer substrate were used to prepare hexagonal Barium ferrite (BaM) thin films by facing target sputtering system. At substrate temperature (Ts) of 600/spl deg/C, the intensities of BaM [00l] planes in X-ray diffraction diagrams were much stronger in the case of Si/sub 3/N/sub 4/ substrate than that of SiO/sub 2//Si wafer substrate. The value of /spl Delta//spl theta//sub 50/ was found about 2.28/spl deg/ for 25-nm thickness of BaM deposited on Si/sub 3/N/sub 4/. Then, Ts was reduced to 525/spl deg/C. Perpendicular coercivity (Hc/sub perp/) and squareness ratio (S/sub perp/) were higher in the case of Si/sub 3/N/sub 4/ substrate even at 525/spl deg/C. The maximum value of Hc/sub perp/=3.25 kOe and S/sub perp/=0.7 was found for the film of 35 nm. It was found that Si/sub 3/N/sub 4/ not only reduces the Ts of BaM during in-situ deposition but also increases the perpendicular anisotropy of BaM thin film. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 2955 |
| Ending Page | 2957 |
| Page Count | 3 |
| File Size | 158871 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 40 |
| Issue Number | 4 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-07-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor thin films Sputtering Anisotropic magnetoresistance Substrates Magnetic films Temperature Ferrimagnetic films Semiconductor films Iron Ferrimagnetic materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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