NDLI: Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Seoane, N. Indalecio, G. Aldegunde, M. Nagy, D. Elmessary, M.A. Garcia-Loureiro, A.J. Kalna, K.
Copyright Year	1963
Abstract	The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics are studied and compared between a 10.4-nm gate length In_0.53Ga_0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analyzed the impact of variability by assessing five figures of merit (threshold voltage, subthreshold slope, OFF-current, drain-induced-barrier-lowering, and ON-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the subthreshold region while, in the ON-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In_0.53Ga_0.47As FinFET is more resilient to the FER and MGW variability in the subthreshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In_0.53Ga_0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In_0.53Ga_0.47As FinFET than for the Si counterpart, respectively.
Sponsorship	IEEE Electron Devices Society
Starting Page	1209
Ending Page	1216
Page Count	8
File Size	4011671
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs Silicon Logic gates Solid modeling Mathematical model Tin Si. III-V materials fin-edge roughness (FER) gate work function variability intrinsic parameter fluctuations
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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