NDLI: A Simulation Study of Carrier Transport Affected by Local Defects in Amorphous InGaZnO Thin-Film Transistors

Content Provider	IEEE Xplore Digital Library
Author	Hsu, C. Chen, Y.
Copyright Year	1963
Abstract	This paper investigates effects of local defects on performances of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) by numerical simulation. For systematic study, the local defects are represented by acceptorlike tail and acceptorlike deep-level defect states. TFT performance dependences on these local defects locating at source region, near source region, in the middle of channel region, near drain region, and at drain region are quantitatively explored. The thicknesses of the a-IGZO layers and defect regions are 10–70 nm. Different a-IGZO layer or defect-region thicknesses lead to distinct TFT performances. Compared with the defects in the source/drain regions, defects in the channel region will lead to severe mobility degradation. The mobility degradation caused by the defects in the drain region is strongly drain-bias dependent. Transfer curves, linear and saturation mobilities, energy band diagrams, conduction current distributions, as well as electric field distributions are investigated to explore the corresponding physical mechanisms.
Sponsorship	IEEE Electron Devices Society
Starting Page	1091
Ending Page	1098
Page Count	8
File Size	2004741
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Degradation Electrodes Energy barrier Performance evaluation Potential energy Logic gates thin-film transistor (TFT). Current-voltage characteristic defect
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Effects of Localized Back-Surface Defects on Bulk and Front-Channel Conduction of Amorphous InGaZnO TFTs

Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

InGaZnO Thin-Film Transistors With Coplanar Control Gates for Single-Device Logic Applications

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO₂/a-InGaZnO/SiO₂ Stack

Capacitance–Voltage Measurement With Photon Probe to Quantify the Trap Density of States in Amorphous Thin-Film Transistors

A Simulation Study of Carrier Transport Affected by Local Defects in Amorphous InGaZnO Thin-Film Transistors

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