NDLI: Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical Switches

Content Provider	IEEE Xplore Digital Library
Author	Barbato, M. Cester, A. Mulloni, V. Margesin, B. Meneghesso, G.
Copyright Year	1963
Abstract	The study of long-term reliability of RF-MEMS switches subjected to continuous biasing involves different failure mechanisms: 1) short-to-medium-term stress inducing permanent phenomena, such as permanent mechanical degradation, and 2) long-term stress inducing recoverable phenomena related to mechanical viscoelastic mechanism. The lifetime prediction should consider all the long-term effects after the saturation of all the short-to-medium-term degradation effects. In fact, the lifetime estimation is affected by both the different short-term and long-term degradation mechanisms and not separating the different effects may lead to wrong lifetime prediction. In this paper, we define a preconditioning technique to be applied to each RF-MEMS switch before any stress test. The main purpose is to eliminate all the short-term permanent effects to obtain a lifetime estimation only related to the long-term phenomena.
Sponsorship	IEEE Electron Devices Society
Starting Page	1274
Ending Page	1280
Page Count	7
File Size	3115473
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Degradation Performance evaluation Reliability Estimation Failure analysis Contacts Radio Frequency Microelectromechanical System (RF MEMS). Lifetime estimation long-term stresses preconditioning reliability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Transient evolution of mechanical and electrical effects in microelectromechanical switches subjected to long-term stresses

A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Microelectromechanical Switches

Lifetime Measurements on a High-Reliability RF-MEMS Contact Switch

Lifetime Extension of RF MEMS Direct Contact Switches in Hot Switching Operations by Ball Grid Array Dimple Design

Longer MEMS Switch Lifetime Using Novel Dual-Pulse Actuation Voltage

An RF-MEMS Switch With Low-Actuation Voltage and High Reliability

Low Temperature Superconducting RF MEMS Devices

Reliability Enhancement by Suitable Actuation Waveforms for Capacitive RF MEMS Switches in III–V Technology

Acceleration of Dielectric Charging in RF MEMS Capacitive Switches

Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical Switches

Similar Documents

Transient evolution of mechanical and electrical effects in microelectromechanical switches subjected to long-term stresses

A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Microelectromechanical Switches

Lifetime Measurements on a High-Reliability RF-MEMS Contact Switch

Lifetime Extension of RF MEMS Direct Contact Switches in Hot Switching Operations by Ball Grid Array Dimple Design

Longer MEMS Switch Lifetime Using Novel Dual-Pulse Actuation Voltage

An RF-MEMS Switch With Low-Actuation Voltage and High Reliability

Low Temperature Superconducting RF MEMS Devices

Reliability Enhancement by Suitable Actuation Waveforms for Capacitive RF MEMS Switches in III–V Technology

Acceleration of Dielectric Charging in RF MEMS Capacitive Switches

Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical Switches