NDLI: A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions

Content Provider	IEEE Xplore Digital Library
Author	Donati Guerrieri, S. Bonani, F. Bertazzi, F. Ghione, G.
Copyright Year	1963
Abstract	We present here and in the companion paper (Part II) a general framework for the modeling of semiconductor device variability through the physics-based analysis of the small-change sensitivity. We consider a very general class of dynamic device operation, i.e., the periodic or quasi-periodic large signal (LS) time-varying regime, and we evaluate the sensitivity of both dc and harmonic components of the device dynamic working point with respect to process or physical device parameters. The proposed technique is based on the linearization of the physics-based device model around a nominal parameter, and extends to the dynamic case the already established Green’s function approach to the numerically efficient dc sensitivity analysis. As an example of application, we consider a class A GaAs MESFET microwave power amplifier; the sensitivity of the LS working point with respect to doping and gate work function variations is evaluated through the proposed approach and compared with the result of repeated LS amplifier analyses, showing that the numerically efficient small-change sensitivity approach provides reliable predictions for parameter variations up to 10% of the nominal value.
Sponsorship	IEEE Electron Devices Society
Starting Page	1195
Ending Page	1201
Page Count	7
File Size	1792320
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mathematical model Harmonic analysis Performance evaluation Numerical models Analytical models Sensitivity analysis variability. Numerical simulations semiconductor device modeling sensitivity
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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