NDLI: Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Yongxun Liu Kamei, T. Matsukawa, T. Endo, K. O'uchi, S. Tsukada, J. Yamauchi, H. Ishikawa, Y. Hayashida, T. Sakamoto, K. Ogura, A. Masahara, M.
Copyright Year	1963
Abstract	The threshold voltage Vt variability in the scaled crystal channel and poly-Si channel double-gate fin-type metal-oxide-semiconductor field-effect transistors (FinFETs) with different gate oxide thicknesses T_ox has been systematically analyzed. By investigating the T_ox dependence of Vt variations in crystal channel FinFETs, the gate-stack origin sources, i.e., work function (φm) variation and gate oxide charge (Q_ox) variation sources, were successfully separated. It was found that the atomically flat Si-fin sidewall channels fabricated by the orientation-dependent wet etching contribute to the reduction of gate-stack origin Vt variations. Moreover, it was experimentally found that the standard Vt deviation (σVt) of poly-Si channel FinFETs is three times higher than that of crystal channel ones, and a good subthreshold slope in the poly-Si channel FinFETs was obtained with gate length Lg down to poly-Si grain size.
Sponsorship	IEEE Electron Devices Society
Starting Page	573
Ending Page	581
Page Count	9
File Size	1205891
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs Logic gates Crystals Fabrication Wet etching Lithography variability Crystal channel fin-type metal–oxide–semiconductor field-effect transistor (FinFET) gate work function poly-Si channel threshold voltage $(V_{t})$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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