NDLI: Improved Thermal Performance of SOI Using a Compound Buried Layer

Content Provider	IEEE Xplore Digital Library
Author	Baine, P. Montgomery, J.H. Armstrong, B.M. Gamble, H.S. Harrington, S.J. Nigrin, S. Wilson, R. Oo, K.B. Armstrong, A.G. Suder, S.
Copyright Year	1963
Abstract	The buried oxide (BOX) layer in silicon on insulator (SOI) was replaced by a compound buried layer (CBL) containing layers of SiO₂, polycrystalline silicon (polysilicon), and SiO₂. The undoped polysilicon in the CBL acted as a dielectric with a higher thermal conductivity than SiO₂. CBL provides a reduced thermal resistance with the same equivalent oxide thickness as a standard SiO₂ buried layer. Thermal resistance was further reduced by lateral heat flow through the polysilicon. Reduction in thermal resistance by up to 68% was observed, dependent on polysilicon thickness. CBL SOI substrates were designed and manufactured to achieve a 40% reduction in thermal resistance compared with an 1.0-μm SiO₂ BOX. Power bipolar transistors with an active silicon layer thickness of 13.5 μm manufactured on CBL SOI substrates showed a 5%-17% reduction in thermal resistance compared with the standard SOI. This reduction was dependent on transistor layout geometry. Between 65% and 90% of the heat flow from these power transistors is laterally through the thick active silicon layer. Analysis confirmed that CBL SOI provided a 40% reduction in the vertical path thermal resistance. Devices employing thinner active silicon layers will achieve the greater benefit from reduction in vertical path thermal resistance offered by CBL SOI.
Sponsorship	IEEE Electron Devices Society
Starting Page	1999
Ending Page	2006
Page Count	8
File Size	1569022
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal resistance Substrates Silicon Thermal conductivity Transistors Conductivity SOI technology. Compound buried layer (CBL) silicon on insulator (SOI) power bipolar transistors on SOI reduced thermal resistance in SOI SOI technology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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