NDLI: SiGe HBTs on bonded SOI incorporating buried silicide layers

Content Provider	IEEE Xplore Digital Library
Author	Bain, M. El Mubarek, H.A.W. Bonar, J.M. Wang, Y. Buiu, O. Gamble, H. Armstrong, B.M. Hemment, P.L.F. Hall, S. Ashburn, P.
Copyright Year	1963
Abstract	A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance measurements as a function of bond temperature. Possible contamination issues associated with the buried tungsten silicide layer are investigated by measuring the collector/base reverse diode tics. A resistivity of 50 /spl mu//spl Omega/cm is obtained for the buried silicide layer for a bond anneal of 120 min at 1000/spl deg/C. Collector/base reverse diode tics show a voltage dependence of approximately V/sup 1/2/, indicating that the leakage current is due to Shockley-Read-Hall generation in the depletion region. Fitting of the current-voltage tics gives a generation lifetime of 90 ns, which is as expected for the collector doping of 7 /spl times/ 10/sup 17/ cm/sup -3/. These results indicate that the buried tungsten silicide layer does not have a serious impact on junction leakage.
Sponsorship	IEEE Electron Devices Society
Starting Page	317
Ending Page	324
Page Count	8
File Size	1313146
File Format	PDF
ISSN	00189383
Volume Number	52
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors Silicon on insulator technology Wafer bonding Electron microscopy Conductivity Annealing Leakage currents Tungsten compounds Germanium alloys Silicon alloys wafer bonding Buried layer groundplane SiGe heterojunction bipolar transistors (HBTs) silicon-on-insulator (SOI) tungsten silicide
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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