NDLI: Current Conduction Mechanism of Nitrogen-Doped <inline-formula> <tex-math notation=TeX>${rm AlO}

Content Provider	IEEE Xplore Digital Library
Author	Wanki Kim Sung Il Park Zhiping Zhang Wong, S.
Copyright Year	1963
Abstract	To eliminate the forming process in resistive random access memory (RRAM), we introduced nitrogen into AlO_x layer to generate a moderate amount of traps inside the film. The composition of nitrogen-doped AlO_x (N-AlO_x) RRAM is revealed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. To understand the current conduction mechanism of N-AlO_x RRAM, we investigated field and temperature dependence of the charge transport. Based on the extracted trap levels of high-resistance state and various low-resistance states, the current conduction is found to be governed by Frenkel-Poole emission. An energy band model is also proposed to clarify the current conduction mechanism and switching behavior of N-AlO_x RRAM.
Sponsorship	IEEE Electron Devices Society
Starting Page	2158
Ending Page	2163
Page Count	6
File Size	1568404
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Nitrogen Switches Energy barrier Electrodes Aluminum X-ray scattering switching mechanism of resistive random access memory. Conduction of resistive random access memory (RRAM) energy barrier Frenkel-Poole emission nitrogen-doped aluminum oxide (N-AlOₓ) nonvolatile memory random access memory resistive switching switching mechanism of resistive random access memory Frenkel¿Poole emission nitrogen-doped aluminum oxide (N- ${\rm AlO}_{x}$ )
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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