NDLI: Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal

Content Provider	IEEE Xplore Digital Library
Author	Georgiev, V.P. Markov, S. Vila-Nadal, L. Busche, C. Cronin, L. Asenov, A.
Copyright Year	1963
Abstract	We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media.
Sponsorship	IEEE Electron Devices Society
Starting Page	2019
Ending Page	2026
Page Count	8
File Size	2961519
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ash Numerical models Programming Logic gates Solid modeling Nonvolatile memory Substrates polyoxometalates (POMs). Device variability molecular electronics multiscale modeling nonvolatile memory (NVM) polyoxometalates (POMs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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