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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Frank, D.J. Solomon, P.M. Dubourdieu, C. Frank, M.M. Narayanan, V. |
| Copyright Year | 1963 |
| Abstract | It has recently been suggested that ferroelectric (FE) negative capacitance effects can be used to achieve steep subthreshold slope field-effect transistors, which are greatly desired for reducing energy consumption in modern digital electronics. Here, we propose that this concept can be improved by the introduction of a very thin metal or metal-like layer (a quantum metal) between the FE and the semiconductor channel. We show how to design this layer so that it attenuates the polarization charge of the FE, applying an appropriate charge to the semiconductor, while at the same time presenting a relatively constant capacitance to the FE layer, as is needed to stabilize the negative capacitance regime. For homogeneous polarization, we estimate that this device (a QMFeFET) can have extremely steep subthreshold characteristics (2 mV/decade over 11 decades) and that its energy and delay performance are advantageous. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 2145 |
| Ending Page | 2153 |
| Page Count | 9 |
| File Size | 1912754 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 61 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Iron Quantum capacitance Logic gates Materials Field effect transistors steep slope. Ferroelectrics (FEs) field-effect transistor (FET) low power devices negative capacitance steep slope |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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