NDLI: 100-nm IGZO Thin-Film Transistors With Film Profile Engineering

Content Provider	IEEE Xplore Digital Library
Author	Horng-Chih Lin Bo-Shiuan Shie Tiao-Yuan Huang
Copyright Year	1963
Abstract	100-nm indium-gallium-zinc-oxide (IGZO) thin-film transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-line-based photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al₂O₃ gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>10⁷) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement.
Sponsorship	IEEE Electron Devices Society
Starting Page	2224
Ending Page	2227
Page Count	4
File Size	856166
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Logic gates Fabrication Zinc oxide Educational institutions thin-film transistors (TFTs). Film profile engineering (FPE) indium-gallium-zinc-oxide (IGZO) metal oxide photoresist (PR) trimming thin-film transistors (TFTs) indium¿gallium¿zinc-oxide (IGZO)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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