NDLI: Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination

Content Provider	IEEE Xplore Digital Library
Author	Kyung Park Hyun-Woo Park Hyun Soo Shin Jonguk Bae Kwon-Shik Park Inbyeong Kang Kwun-Bum Chung Jang-Yeon Kwon
Copyright Year	1963
Abstract	We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.
Sponsorship	IEEE Electron Devices Society
Starting Page	2900
Ending Page	2905
Page Count	6
File Size	1651325
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Stress Reliability Thin film transistors Lighting Temperature measurement Crystallization reliability. electronic structure indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) oxide semiconductor reliability indium–gallium–zinc-oxide (IGZO) thin-film transistors (TFTs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors

Effects of low-temperature thermal annealing on interface characteristics in IZO/IGZO dual-channel thin-film transistors

100-nm IGZO Thin-Film Transistors With Film Profile Engineering

Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

Suppression of Light Influx Into the Channel Region of Photosensitive Thin-Film Transistors

Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs

Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination

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Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors

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