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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Guofu Niu Hua Yang Varadharajaperumal, M. Yun Shi Cressler, J.D. Krithivasan, R. Marshall, P.W. Reed, R. |
| Copyright Year | 1963 |
| Abstract | We present a new back junction approach for reducing SEU-induced charge collection in SiGe HBTS, and demonstrate its effectiveness in a state-of-the-art 200 GHz SiGe HBT using full 3-D device simulation. An additional n/sup +/ layer is used below the p-type isolation layer to form a back junction. The back junction limits potential funneling to within the p-type layer, which effectively limits the total amount of drift charge collection that is now shared by the collector-to-substrate junction and the back junction. The back junction also cuts off the diffusion charge coming from the substrate, further limiting charge collection by the HBT collector. A thinner p-type "substrate" layer and a better contact to the added n/sup +/ layer are shown to help reduce charge collection by the HBT collector, the sensitive node. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 2153 |
| Ending Page | 2157 |
| Page Count | 5 |
| File Size | 404083 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 52 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Substrates Single event upset Radiation hardening Doping CMOS process Semiconductor films Etching SiGe HBT Charge collection charge sharing SEU |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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