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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ikeda, N. Kuboyama, S. Matsuda, S. Handa, T. |
| Copyright Year | 1963 |
| Abstract | Angular dependence of proton-induced Multiple-Bit Upsets (MBUs) in a synchronous SRAM is reported. Experiments showed that the cross section of MBU depended on proton energy, incident direction, and physical arrangement of sensitive transistors in adjacent cells. Also analysis clarified that there was a special condition which MBU could be caused by a mechanism of Single-Event Upsets (SEUs), not by that of MBUs. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 2200 |
| Ending Page | 2204 |
| Page Count | 5 |
| File Size | 650717 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 52 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Random access memory Protons Single event transient Logic testing CMOS technology Single event upset Space vehicles Satellites Anisotropic magnetoresistance Silicon on insulator technology SRAM Angular irradiation GEANT4 Multiple-Bit Upset (MBU) proton Single-Event Upset (SEU) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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