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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sutton, A.K. Haugerud, B.M. Prakash, A.P.G. Bongim Jun Cressler, J.D. Marshall, C.J. Marshall, P.W. Ladbury, R. Guarin, F. Joseph, A.J. |
| Copyright Year | 1963 |
| Abstract | We present the results of gamma irradiation on third-generation, 200 GHz SiGe HBTs. Pre- and post-radiation dc figures-of-merit are used to quantify the tolerance of the raised extrinsic base structure to Co-60 gamma rays for varying device geometries. Additionally, the impact of technology scaling on the observed radiation response is addressed through comparisons to second generation, 120 GHz SiGe HBTs. Comparisons to previous proton-induced degradation results in these 200 GHz SiGe HBTs are also made, and indicate that the STI isolation oxide of the device shows increased degradation following Co-60 irradiation. The EB spacer oxide, on the other hand, demonstrates increased susceptibility to proton damage. Low dose rate proton testing was also performed and indicate that although there is a proton dose rate effect present in these devices, it cannot fully explain the observed trends. Similar trends have previously been observed for buried oxides and isolation oxides in several MOS technologies and have been attributed to increased charge yield in these oxides for 1.2 MeV Co-60 gamma rays when compared to 63 MeV protons. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 2358 |
| Ending Page | 2365 |
| Page Count | 8 |
| File Size | 530382 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 52 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Proton radiation effects Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Isolation technology Microelectronics Gamma rays Degradation Space technology III-V semiconductor materials technology scaling EB spacer ELDRS gamma radiation proton radiation radiation sources SiGe SiGe HBT shallow trench isolation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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