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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Witczak, S.C. Lacoe, R.C. Osborn, J.V. Hutson, J.M. Moss, S.C. |
| Copyright Year | 1963 |
| Abstract | Radiation-induced edge-leakage current in minimum geometry n-channel MOSFETs from five submicron technologies is examined as a function of dose rate. Under worst-case bias, degradation of transistors from the TSMC 0.35-, 0.25-, and 0.18-/spl mu/m processes is more severe following low-dose-rate irradiation than following high-dose-rate irradiation and anneal. The leakage current anneals with an activation energy of /spl sim/1.0 eV, which suggests that charge trapping in the field oxide is associated with shallow defects such as E'/sub /spl delta// centers. A comparison of the device response to a first-order kinetics model for hole trapping and annealing indicates that the enhanced degradation results from slower annealing rates following low-dose-rate irradiation. These results suggest that space charge in the field oxide may contribute to the dose rate sensitivity by altering the spatial distribution of trapped holes. In contrast to the response of the TSMC parts, high-dose-rate irradiation and anneal bounds low-dose-rate degradation of transistors from the HP 0.50- and 0.35-/spl mu/m processes. These results imply that existing qualification approaches based on high-dose-rate irradiation and anneal may not be conservative for the hardness assurance testing of some advanced CMOS devices. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 2602 |
| Ending Page | 2608 |
| Page Count | 7 |
| File Size | 380259 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 52 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Annealing Degradation Geometry Leakage current Kinetic theory Space charge Transistors Qualifications Testing space charge Anneal dose rate edge-leakage current field oxide hardness assurance ionizing radiation MIL-STD-883F Method 1019.6 metal–oxide–semiconductor field-effect transistor (MOSFET) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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