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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tsetseris, L. Schrimpf, R.D. Fleetwood, D.M. Pease, R.L. Pantelides, S.T. |
| Copyright Year | 1963 |
| Abstract | Degradation due to irradiation is known to be associated with the presence of hydrogen in the bulk of the gate oxide, in bulk Si, and at the Si/SiO/sub 2/ interface. Previous studies have shown that the migration of protons in the oxide for positive applied gate bias and their reactions at the interface can account for the time and dose-rate dependence of the degradation. Recent experiments, however, have shown that interfacial degradation can occur even in the presence of strong negative gate bias that prevents the arrival of protons at the interface from the oxide side. This result suggests that mechanisms in addition to proton drift in SiO/sub 2/ can lead to radiation-induced interface-trap formation. Since previous work on modeling the enhanced low-dose-rate sensitivity (ELDRS) of irradiated bipolar devices was based on formation of an electrostatic barrier that hinders proton transport to the interface at high dose rates, this effect also must be examined in more detail. In this work we use results from first-principles calculations to demonstrate that hydrogen can also be released easily in bulk Si, and especially in the near interfacial area. This hydrogen moves readily to the interface under negative bias. Typical hydrogen precursors in Si are identified as H-dopant complexes. ELDRS shares thus a common origin with another critical reliability phenomenon, the negative bias-temperature instability. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 2265 |
| Ending Page | 2271 |
| Page Count | 7 |
| File Size | 246832 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 52 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature sensors Degradation Hydrogen Protons MOSFETs Extraterrestrial measurements Laboratories Physics Astronomy Context modeling radiation effects Bipolar transistors enhanced low-dose-rate sensitivity interface phenomena interface traps |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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