NDLI: High-Q Gallium Nitride Nanowire Resonators With Piezoresistive Readout

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Jason, M. Gray Charles, T. Rogers Kris, A. Bertness Norman, A. Sanford
Copyright Year	2011
Abstract	We report on the fabrication and piezoresistive readout of doubly-clamped c-axis GaN nanowire (NW) mechanical resonators. As-grown GaN-NW resonators have demonstrated exceptional mechanical quality factors (Q, defined as resonance frequeny over full width at half maximum power) in the range of 104–105 [1]. This work confirms the NWs can retain this high Q even after removal from the growth substrate and placement on lithographically-defined test structures, with a highest Q to date of 26,000 at 10−5 Pa and 8 K. Wires range from 100–500 nm in diameter and 15–18 micrometers in length. We fabricate the devices using a combination of lithographic patterning and dielectrophoresis to suspend NWs over 8 or 10 micrometer gaps. We deposit an electrostatic gate ∼1 micrometer away from the NW to induce vibration, with readout utilizing the piezoresistivity of GaN. Observed resonances range from 9–36 MHz, consistent with a Young’s modulus of roughly 300 GPA. At room temperature and under vacuum, Q for these fabricated devices is typically around 103, significantly lower than the 104–105 range of the as-grown wires. However, the larger Q can be recovered by cooling the substrate. We find that by ∼10 K, Q increases by an order of magnitude to above 104. We will discuss the temperature dependence, as well as fabrication and processing effects, on the NW resonance and Q.
Starting Page	323
Ending Page	327
Page Count	5
File Format	PDF
ISBN	9780791854976
DOI	10.1115/IMECE2011-65296
Volume Number	Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration
Conference Proceedings	ASME 2011 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2011-11-11
Publisher Place	Denver, Colorado, USA
Access Restriction	Subscribed
Subject Keyword	Q-factor Temperature Cooling Vibration Wire Gallium nitride Young's modulus Gates (closures) Vacuum Temperature effects Resonance Nanowires Manufacturing Dielectrophoresis
Content Type	Text
Resource Type	Article

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