NDLI: Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal–oxide

Content Provider	IET Digital Library
Author	Assalti, Rafael Oliveira, Lígia Martins d' Pavanello, Marcelo Antonio Flandre, Denis Souza, Michelly de
Abstract	In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistors configuration applied to common-source current mirrors (CMs) have been analysed through experimental measurements, comparing with symmetric self-cascode configuration as well as with standard uniformly doped transistor. The mirroring precision, output resistance and output swing have been used as figures of merit to evaluate the improvements achieved with the use of A-SC transistors. Two-dimensional numerical simulations have been also performed in order to further explore the advantages of A-SC transistor in common-source CMs. The obtained results have shown that the best mirroring precision has been obtained with larger channel lengths of the transistor near the source. Despite the worsened intrinsic mismatching presented by common-source CMs implemented with A-SC transistors in comparison with single transistor CM, the A-SC structure has allowed larger output resistance, breakdown voltage and better mirroring precision.
Starting Page	349
Ending Page	355
Page Count	7
ISSN	1751858X
Volume Number	10
e-ISSN	17518598
Issue Number	Issue 4, Jul (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/10/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2015.0159
Journal	IET Circuits, Devices & Systems
Publisher Date	2016-07-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	A-SC Transistor Amplifiers Asymmetric Self-cascode Silicon-on-insulator Common-source Current Mirrors Current Mirrors Design And Testing Electrical Characteristic Equivalent Circuit Fully Depleted Silicon-on-insulator Insulated Gate Field Effect Transistors Mirroring Precision MOSFET N-channel Metal-oxide-semiconductor Field-effect Transistors Numerical Analysis Numerical Method Semiconductor Device Model Semiconductor Device Modelling Silicon-on-insulator Two-dimensional Numerical Simulations Worsened Intrinsic Mismatching
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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