NDLI: Simple method to measure the etching rate of monocrystalline silicon in KOH solution

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The Journal of Engineering

Simple method to measure the etching rate of monocrystalline silicon in KOH solution

Content Provider	IET Digital Library
Author	Chen, Cheng Jiang, Liang Zhang, Peng Wang, Hongbo Qian, Linmao
Abstract	A simple and low-cost method is proposed to measure the etching rate of monocrystalline silicon in KOH solution with various pHs through atomic force microscopy. The native oxide on the silicon surface is applied as a mask film to achieve selective etching. A quadrate-part area of the native oxide on silicon substrate surface is removed through the non-destructive tribochemical removal of the SiO2 microsphere. As a result, the fresh subsurface silicon is exposed and etched smoothly. The adjacent remaining native oxide is hardly etched by the KOH solution. After etching in KOH, a step forms at the boundary between the remaining native oxide layer and exposed silicon surface. The atomistic-precision measurement of atomic force microscopy can detect a tiny etching depth of silicon, thereby acquiring the accurate etching rate in the KOH solution. This method provides a new and simple concept to measure the etching rate of materials in a suitable etchant and afford high-precision measurement to the etching rate required in the design of a material etching process.
Starting Page	481
Ending Page	485
Page Count	5
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 4, Apr (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0628
Journal	Micro & Nano Letters
Publisher Date	2018-04-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Atomic Force Microscopy Atomic-force Microscopy Atomistic-precision Measurement Electrochemistry And Electrophoresis Elemental Semiconductor Etching Etching Rate KOH Solution Mask Film Microsphere Monocrystalline Silicon Native Oxide Nondestructive Tribochemical Removal PH Semiconductor Technology Silicon Solid Surface Structure Surface Topography Measurement Surface Treatment And Coating Technique
Content Type	Text
Resource Type	Article

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