NDLI: Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label-free detection

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Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label-free detection

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Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label-free detection

Content Provider	IET Digital Library
Author	Chandan, Bandi Venkata Nigam, Kaushal Sharma, Dheeraj
Abstract	The fabrication complexity and cost effectiveness in nanoscale regime have been one of the major issues in the modern biosensor. Therefore, to overcome such issue, this study investigates a junctionless dielectrically modulated electrically doped tunnel field effect transistor (FET) as a biosensor for application of label free detection. In this work, the authors have been considered the n + heavily doped silicon layer and two isolate gates for the formation of intrinsic and p + source regions underneath the control gate (CG) and polarity gate (PG) with appropriate work functions and polarity bias over silicon body which are similar to that of conventional tunnel FET. The proposed device structure is immune against doping control issues, avoids thermal budget, and fabrication issues. Moreover, the formation of nanogap cavity embedded within the CG dielectric is performed by etching of CG dielectric region towards the PG side for the purpose of sensing the biomolecules. The sensing ability of the proposed device has been evaluated in terms of varying the dielectric constant and charge density of the biomolecules. However, transfer characteristics are also evaluated with the variation in thickness and length of the cavity. All the simulations have been performed using ATLAS technology computer aided design device simulator.
Starting Page	452
Ending Page	456
Page Count	5
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 4, Apr (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0580
Journal	Micro & Nano Letters
Publisher Date	2018-04-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	ATLAS Technology Biomolecular Dynamics Biomolecule Sensing Biosensor CAD Charge Density Computer Aided Design Device Simulator Control Gate Design And Testing Dielectric Constant Doping Elemental Semiconductor Equivalent Circuit Etching Field Effect Device Field Effect Transistor Field Effect Transistors Heavily Doped Silicon Layer Isolated Gate Junctionless Based Dielectric Modulated Electrically Doped Tunnel FET Label Free Detection Molecular Biophysics Molecular Pattern Recognition Molecular Probes Nanogap Cavity Photonic Technology Polarity Bias Polarity Gate Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Semiconductor Technology Silicon Surface Topography Measurement Transfer Characteristic Tunnel Transistors Work Function
Content Type	Text
Resource Type	Article

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