NDLI: Modified Schottky Barrier CNTFET with lightly doped drain

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The Journal of Engineering

Modified Schottky Barrier CNTFET with lightly doped drain

Content Provider	IET Digital Library
Author	Raeini, Amin Ghasemi Nejad Kordrostami, Zoheir
Abstract	For the first time, a modified Schottky barrier carbon nanotube field-effect transistor (SB-CNTFET) with lightly doped drain (LDD) has been proposed. The newly designed CNTFET benefits from the advantages of both SB in source and the lightly doped ohmic drain contact. Simulations are based on two-dimensional non-equilibrium Green's function solved self-consistently with Poisson's equation. To get to an improved electrical characteristic, comparisons have been made among four CNTFET structures which are conventional SB-CNTFETs, triple LDD-CNTFET (TLDD-CNTFET), double LDD-CNTFET and Schottky source and ohmic drain CNTFET. The results show that the TLDD-CNTFET design decreases the leakage current significantly and increases on–off-current ratio as well as the cut-off frequency. It is also demonstrated that TLDD-CNTFET structure possesses three perceivable steps in the potential profile of the channel, which leads to additional lateral electric field peaks inside the channel and thus improve the immunity against short-channel effects. The important parameters such as transconductance, on–off ratio, subthreshold swing, cut-off frequency, delay and drain-induced barrier lowering of the CNTFETs have been calculated and discussed. Results show that by using lightly doped regions in the drain of SB-CNTFETs, the dc and ac characteristics have been considerably improved compared with the conventional SB-CNTFET.
Starting Page	442
Ending Page	447
Page Count	6
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 4, Apr (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0255
Journal	Micro & Nano Letters
Publisher Date	2018-04-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AC Characteristic Carbon Nanotube Field Effect Transistors Carbon Nanotubes Cut-off Frequency Dc Characteristic Design And Testing Double LDD-CNTFET Drain-induced Barrier Lowering Electrical Characteristic Equivalent Circuit Field Effect Device Fullerene Green's Function Lateral Electric Field Leakage Current Lightly Doped Ohmic Drain Contact Nanotube And Related Device Ohmic Contacts Ohmic Drain CNTFET On-off-current Ratio Poisson Equation SB-CNTFET Schottky Barrier Carbon Nanotube Field-effect Transistor Schottky Barriers Schottky Source CNTFET Semiconductor Device Model Semiconductor Device Modelling Short-channel Effect Subthreshold Swing Transconductance Triple LDD-CNTFET Two-dimensional Nonequilibrium Green's Function
Content Type	Text
Resource Type	Article

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