NDLI: High speed etching of silicon in KOH + NH2OH solution at lower temperatures for the fabrication of through holes in silicon wafer

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High speed etching of silicon in KOH + NH2OH solution at lower temperatures for the fabrication of through holes in silicon wafer

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High speed etching of silicon in KOH + NH2OH solution at lower temperatures for the fabrication of through holes in silicon wafer

Content Provider	IET Digital Library
Author	Menon, Parappurath Krishna Rao, Avvaru Venkata Narasimha Murthy, Airpula Linga Pandey, Ashok Kumar Pal, Prem
Abstract	In the fabrication of complicated MEMS inertial sensors, there are many instances where metallisation cannot be done by usual methods such as lift off or conventional metal etch. In such cases, a shadow mask needs to be used. A silicon shadow mask can be realised by the fabrication of through holes in silicon. This also can be used as a cover wafer for wafer level encapsulation by fabricating a cavity in the device region. The fabrication of the shadow mask is carried out by doing double side wet anisotropic etching using potassium hydroxide (KOH) + hydroxylamine (NH2OH) solution at low temperatures of 50–60°C. The low temperature of etching is preferred so as to reduce the etching of thermal oxide used as a mask layer. This work focuses on the etching characteristics of the KOH + NH2OH solution at low temperatures in terms of etch rate, undercutting, surface morphology, and selectivity of an oxide layer with silicon. This is very useful in through hole etching using silicon dioxide as a mask. The effect of aging on these characteristics is also studied and this is useful in continuous etching spread over few days especially during pilot production. The results are compared with those obtained using a pure KOH solution.
Starting Page	365
Ending Page	369
Page Count	5
Volume Number	15
e-ISSN	17500443
Issue Number	Issue 6, May (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/15/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2019.0570
Journal	Micro & Nano Letters
Publisher Date	2020-05-27
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Conventional Metal Etch Double Side Wet Anisotropic Etching Elemental Semiconductor Encapsulation Etching Characteristic Fabrication of MEMS And NEMS Device High Speed Etching Hole Etching Hydroxylamine Mask Layer Masks MEMS Inertial Sonsor Microfabrication Micromechanical And Nanomechanical Device And System Microsensor Microsensors And Nanosensors Oxidation Oxide Layer Potassium Hydroxide Pure KOH Solution Semiconductor Technology Sensing And Detecting Device Silicon Silicon Dioxide Silicon Shadow Mask Silicon Wafer Sputter Etching Surface Modulator/Detector Array Surface Topography Measurement Surface Treatment And Coating Technique Temperature 50.0 DegC to 60.0 DegC Through Hole Fabrication Wafer Level Encapsulation
Content Type	Text
Resource Type	Article

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