NDLI: Anisotropic etching in low-concentration KOH: effects of surfactant concentration

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Anisotropic etching in low-concentration KOH: effects of surfactant concentration

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The Journal of Engineering

Anisotropic etching in low-concentration KOH: effects of surfactant concentration

Content Provider	IET Digital Library
Author	Pal, Prem Ashok, Akarapu Haldar, Subhomoy Xing, Yan Sato, Kazuo
Abstract	Potassium hydroxide (KOH) provides high anisotropy between the Si{111} and Si{100} planes in comparison to tetramethylammonium hydroxide (TMAH). Moreover, the etch rate of Si{100} is higher in KOH than in TMAH, which is indispensable for high productivity to reduce the cost of end products. The etching study of pure and surfactant-added low-concentration KOH is presented. Triton X-100, with formula C14H22O(C2H4O) n , where n = 9, 10, is used as the surfactant. This research focuses on the investigation of the effect of surfactant on the etching characteristics of low-concentration KOH. The value of the surfactant concentration ranges from 100 ppb to 1000 ppm and the etching temperature ranges from 60 to 76°C. The low-concentration KOH is selected because of its low cost and because of its use as an oxide layer and as an etch mask. Furthermore, the etchant is explored for the fabrication of silicon dioxide micromechanical structures. The addition of a small amount of surfactant reduces the undercutting at the convex corners. This property is explored to perform almost conformal etching to fabricate microstructures with minimum undercutting at mask edges and corners.
Starting Page	224
Ending Page	228
Page Count	5
Volume Number	10
e-ISSN	17500443
Issue Number	Issue 4, Apr (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/10/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2014.0685
Journal	Micro & Nano Letters
Publisher Date	2015-03-31
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Anisotropic Etching Conformal Etching Convex Corners Elemental Semiconductor Etch Mask Etch Rate Etchant Etching Fabrication of MEMS And NEMS Device Mask Corners Mask Edge Micromechanical And Nanomechanical Device And System Micromechanical Device Minimum Undercutting Oxide Layer Semiconductor Technology Silicon Silicon Compound Silicon Dioxide Micromechanical Structure Fabrication SiO2 Si{100} Plane Si{111} Plane Surface Topography Measurement Surface Treatment And Coating Technique Surfactant Concentration Effect Surfactant-added Low-concentration Potassium Hydroxide Surfactants Temperature 60 DegC to 76 DegC Tetramethylammonium Hydroxide Triton X-100
Content Type	Text
Resource Type	Article

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