NDLI: Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering

Content Provider	IET Digital Library
Author	Korivi, N. Nujhat, N. Ahmed, S. Jiang, L. Das, K.
Abstract	A new method is reported to grow polycrystalline germanium (Ge) on silicon (Si) at low temperatures by direct current magnetron sputtering. The method is based on first sputtering a nanometre scale thickness Si layer on a Si substrate, followed by sputtering a Ge layer of the desired thickness. Using this approach, polycrystalline Ge has been deposited on Si substrate at 300°C, the lowest reported process temperature for polycrystalline Ge on Si by sputter coating. Characterisation by X-ray diffraction and Raman spectroscopy showed polycrystalline Ge in the presence of a Si interfacial layer. In the absence of the interfacial Si layer, amorphous Ge was obtained under the same process conditions. These observations indicate that depositing a Si interfacial layer helps in improving the Ge film quality in low-temperature deposition conditions. The approach developed here makes it possible to achieve post-CMOS integration in applications that have low thermal budget, such as flexible electronics based on Si/Ge devices. The increased process flexibility offered by this method is also expected to enable new applications.
Starting Page	1043
Ending Page	1045
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 17, Aug (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/17
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.1291
Journal	Electronics Letters
Publisher Date	2018-07-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amorphous Germanium Amorphous Semiconductors Deposition by Sputtering Direct Current Magnetron Sputtering Elemental Semiconductor Epitaxy Flexible Electronics Germanium Germanium Film Quality Germanium Layer Infrared And Raman Spectra in Inorganic Crystal Interfacial Silicon Layer Low Thermal Budget Low-temperature Deposition Nanofabrication Nanometre Scale Thickness Silicon Layer Nanometre-Scale Semiconductor Fabrication Technology NanoParticle Nanostructured Material Nanotube And Nanostructured Material Polycrystalline Germanium-on-silicon Post-CMOS Integration Raman Spectra Raman Spectroscopy Semiconductor Growth Semiconductor Thin Film Si-Ge Silicon Silicon Substrate Silicon-germanium Device Sputter Coating Sputter Deposition Sputtered Coatings Structure Structure of Solid Clusters Temperature 300.0 DegC Thin Film Growth X-Ray Diffraction
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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