NDLI: Vertical type double gate tunnelling FETs with thin tunnel barrier

Content Provider	IET Digital Library
Author	Kim, Jang Hyun Kim, Sang Wan Kim, Hyun Woo Park, Byung Gook
Abstract	A vertical type tunnelling field-effect transistor (TFET) with a thin tunnel junction based on a bulk Si substrate is presented. In the authors' previously reported L-shaped TFET, a thin tunnel barrier and a large tunnelling area were employed on the source side to achieve a steep subthreshold swing (SS) and high on-current, which can lead to the TFET's outstanding performance. The proposed TFET devices demonstrate a SS of 32 mV/decade averaged over five decades and an I on > 10−5 A/μm. Moreover, the on-current can be increased easily by adjusting the height of the source. However, since a hump phenomenon in the transfer curves occurred, the hump behaviour in the proposed device was investigated. After investigating it, the hump behaviour was found to have originated from two different tunnelling regions. Moreover, their threshold voltages show different values. Using a capping layer that can be made by gradual doping, the hump behaviour can be suppressed.
Starting Page	718
Ending Page	720
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 9, Apr (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/9
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.3864
Journal	Electronics Letters
Publisher Date	2015-04-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bulk Si Substrate Capping Layer Elemental Semiconductor Field Effect Device Field Effect Transistors Gradual Doping Hump Phenomenon Insulated Gate Field Effect Transistors L-shaped TFET Silicon Steep Subthreshold Swing Thin Tunnel Barrier Thin Tunnel Junction Threshold Voltage Transfer Curves Tunnelling Tunnelling Region Vertical Type Double Gate Tunnelling FET Vertical Type Tunnelling Field-effect Transistor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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