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| Content Provider | IET Digital Library |
|---|---|
| Author | Chen, Dazheng Xu, Yu An, Zhiyuan Li, Zhen Zhang, Chunfu |
| Abstract | Ga2O3 is a wide bandgap oxide semiconductor material with the bandgap value only second in magnitude to diamond among known semiconductors. As a wide-bandgap semiconductor, Ga2O3 has emerged as a new competitor to silicon carbide and III-nitrides in various applications of ultraviolet optoelectronics and high power electronics. However, almost all the devices are based on the Ga2O3 grown by molecular-beam epitaxy or chemical vapour deposition, which is time-consuming and expensive. In this work, the authors report on thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method. The morphological, optical and electrical properties of the films and devices are investigated using a range of characterisation techniques, whilst the effects of post-deposition annealing are also investigated. Both as fabricated and post-annealed Ga2O3 films are found to be very smooth and exhibit wide energy bandgaps of around 4.8 and 4.9 eV, respectively. Thin-film transistors based on the grown Ga2O3 films show n-type conductivity with the maximum electron mobility of 0.1 cm2/Vs. |
| Starting Page | 1052 |
| Ending Page | 1055 |
| Page Count | 4 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 10, Sep (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/10 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5825 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-09-04 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Annealing Processes Annealing Processes in Semiconductor Technology Aqueous-solution Spin-coating Method Chemical Vapour Deposition Electrical Conductivity Electrical Property Electrical Property of Other Inorganic Semiconductors (thin Films/low-dimensional Structures) Electron Mobility Energy Gap Epitaxy Field Effect Device Ga2O3 Gallium Compound Heat And Thermomechanical Treatments High Power Electronics Inorganic SemiConductor And Insulator Insulator Ion Plating And Other Vapour Deposition Low-field Transport And Mobility Molecular-beam Epitaxy Morphological Property N-type Conductivity Optical Property Oxide And Ferrite SemiConductor Piezoresistance Post-deposition Annealing Semiconductor Semiconductor Growth Semiconductor Thin Film Solid Surface Structure Spin Coating Structure Surface Modulator/Detector Array Thin Film Deposition Technique Thin Film Growth Thin Film Transistors Thin-film Transistors Ultraviolet Optoelectronics Wide Band Gap SemiConductor Wide Bandgap Ga2O3 Film Wide-bandgap Semiconductor |
| Content Type | Text |
| Resource Type | Article |
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