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| Content Provider | IET Digital Library |
|---|---|
| Author | Bao, Tana Ning, Jun Bolag, Altan Narengerile, Narengerile |
| Abstract | Titanium dioxide nanotubes prepared by hydrothermal method and the TiO2 films and TiO2 nanotube film were prepared by spin-coating method. The TiO2 nanotube film and a part of TiO2 film were annealed at 150°C for 1 h, while the another part of TiO2 film was annealed at 500°C. The high-resolution transmission electron microscopy analysis indicated that the TiO2 nanotubes prepared by hydrothermal method have been crystallised and the lattice plane indices corresponded to anatase {200}, and the TiO2 nanotube grown along the 〈100〉 direction. The atomic force microscopy results show that the surface morphology of the TiO2 film annealed at 150°C was smooth and uniform (0.62 nm in roughness) compared to the surface morphology of TiO2 film annealed at 500°C (roughness is 2.41 nm). For the TiO2 nanotube film, the nanotube fragments were uniformly dispersed in the base and the complete films have been prepared and the roughness was reached to 6.4 nm. The optical properties showed that the visible light transmittance of the TiO2 nanotube film was larger (larger than 95%) than the TiO2 film. The electrical properties showed that square resistance of TiO2 nanotube film was smaller than that of TiO2 film. |
| Starting Page | 1208 |
| Ending Page | 1212 |
| Page Count | 5 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 11, Sep (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/11 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5642 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-09-25 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Anatase {200} Annealing Processes Annealing Processes in Semiconductor Technology Atomic Force Microscopy Crystallisation Deposition from Liquid Phase (melts And Solutions) Electrical Property Electrical Property of Other Inorganic Semiconductors (thin Films/low-dimensional Structures) Electrical Resistivity Epitaxy High-resolution Transmission Electron Microscopy Hydrothermal Method Inorganic SemiConductor And Insulator Lattice Plane Liquid Phase Deposition Low-Dimensional Structure: Growth, Structure And Nonelectronic Property Microstructure Nanofabrication Nanometre-Scale Semiconductor Fabrication Technology NanoParticle Nanotube And Nanostructured Material Optical Property Oxide And Ferrite SemiConductor Semiconductor Growth Semiconductor Material Semiconductor Nanotube Semiconductor Thin Film Solid Surface Structure Spin Coating Spin-coating Method Square Resistance Structure Structure of Solid Clusters Surface Modulator/Detector Array Surface Resistance Measurement Temperature 150.0 DegC Temperature 500.0 DegC Thin Film Growth Time 1.0 Hour TiO2 Titanium Compound Titanium Dioxide Nanotube Thin Film Transmission Electron Microscopy Visible And Ultraviolet Spectra of Other Nonmetals Visible Light Transmittance Visible Spectra 〈100〉 Direction |
| Content Type | Text |
| Resource Type | Article |
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