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Content Provider | IET Digital Library |
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Author | Bhagat, Khemnand B. Patil, Ganesh C. |
Abstract | The impact of substrate doping on the short-channel effects (SCEs) of bulk-planar junctionless transistor (BPJLT) has been studied. It has been found that increasing substrate doping in bulk region reduces off-state leakage current (I OFF) and the sub-threshold slope (SS) of the device. To further reduce the SCEs of BPJLT heavily doped δ-layer of thickness 10 nm has been added below the channel. Despite the presence of δ-layer in BPJLT reduces SCEs, the SCE, mainly SS, is still limited by the fundamental limit of 60 mV/decade. Therefore, to reduce SS below 60 mV/decade, negative capacitance (NC) δ-BPJLT has been proposed by adding the layer of ferroelectric material at gate stack. It has been found that in comparison with conventional BPJLT and δ-BPJLT, the insertion of ferroelectric layer in NC-δ-BPJLT not only reduces the I OFF and the SS but also improves I ON/I OFF ratio of the device. Thus, embedding heavily doped δ-layer in the bulk region and the ferroelectric layer at the gate stack of BPJLT makes it a promising device for low-power applications. |
Starting Page | 1107 |
Ending Page | 1110 |
Page Count | 4 |
Volume Number | 14 |
e-ISSN | 17500443 |
Issue Number | Issue 10, Sep (2019) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/10 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2019.0153 |
Journal | Micro & Nano Letters |
Publisher Date | 2019-09-04 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | BPJLT Heavily Doped Δ-layer Bulk Region Bulk-planar Junctionless Transistor Design And Testing Electrical/electronic Equipment Energy Utilisation Equivalent Circuit Ferroelectric Layer Ferroelectric Material Field Effect Device Field Effect Transistors Leakage Current Low Power Electronics Low-power Application NCδ-BPJLT Negative Capacitance Δ-BPJLT Off-state Leakage Current Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Short-channel Effect Size 10.0 Nm Sub-threshold Slope Substrate Doping |
Content Type | Text |
Resource Type | Article |
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