NDLI: Ternary semiconductor ZnSe0.7Te0.3 nanowires

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Ternary semiconductor ZnSe0.7Te0.3 nanowires

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The Journal of Engineering

Ternary semiconductor ZnSe0.7Te0.3 nanowires

Content Provider	IET Digital Library
Author	Li, Shanying Su, Qing Zhao, Haipeng Tian, Damin
Abstract	Ternary semiconductor ZnSe0.7Te0.3 nanowires (NWs) are synthesised by using a thermal evaporation method, and the as-synthesised NWs have a wurtzite structure with a growth direction of [001]. The electrical measurements are carried out based on nano-field-effect transistors fabricated by individual NWs, and the electron transport characteristics reveal that the ZnSe0.7Te0.3 NWs have p-type conductivity with a high-mobility (μh ) of 0.9 cm2 V−1S−1 and carrier concentration (nh ) 5 × 1018 cm−3. Photoluminescence measurements for ZnSe0.7Te0.3 NWs show a dominant emission peaked at 478 nm which is the emission of free exciton.
Starting Page	436
Ending Page	439
Page Count	4
Volume Number	8
e-ISSN	17500443
Issue Number	Issue 8, Aug (2013)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/8/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2013.0139
Journal	Micro & Nano Letters
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Carrier Concentration Carrier Density Carrier Mobility Electrical Conductivity Electrical Property Electrical Property of II-VI And III-V Semiconductors Electron State in Low-dimensional Structure Electron Transport Epitaxy Excitons Field Effect Device Field Effect Transistors Free Exciton II-VI And III-V SemiConductor II-VI SemiConductor Ion Plating And Other Vapour Deposition Low-Dimensional Structure: Growth, Structure And Nonelectronic Property Method of Nanofabrication And Processing Mobility Nanofabrication Nanofield-effect Transistors Nanometre-Scale Semiconductor Fabrication Technology NanoParticle Nanotube And Nanostructured Material Nanowires Optical Property of II-VI And III-V SemiConductor P-type Conductivity Photoluminescence Photoluminescence in II-VI And III-V SemiConductor Quantum Wells And Related Structure Semiconductor Growth Semiconductor Superlattices Structure Structure of Solid Clusters Ternary Semiconductor Nanowires Thermal Evaporation Thin Film Deposition Technique Thin Film Growth Vapour Deposition Wide Band Gap SemiConductor Wurtzite Structure Zinc Compound ZnSe0.7Te0.3
Content Type	Text
Resource Type	Article

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