NDLI: Structures and characteristics of delafossite CuCr1−x O2 thin films prepared by pulsed laser deposition

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Structures and characteristics of delafossite CuCr1−x O2 thin films prepared by pulsed laser deposition

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The Journal of Engineering

Structures and characteristics of delafossite CuCr1−x O2 thin films prepared by pulsed laser deposition

Content Provider	IET Digital Library
Author	Sidik, Umar Kim, Jung Hee Kim, Hae Kyoung Lee, Hee Young Lee, Jai Yeoul
Abstract	The effects of Cr-stoichiometry on the structural, electrical and optical properties of delafossite-type CuCrO2 thin films are reported. Thin films were grown by pulsed laser deposition on glass and c-sapphire single-crystal substrates, and the effects of increased temperature on the thin film properties were examined. The substrate temperature and oxygen partial pressure were found to be important processing parameters for fabricating delafossite thin films. The electrical properties of the thin films generally improved with increasing substrate temperature. The properties of the thin films depend on the crystallinity. The improvements in crystallinity and electrical conductivity were made by increasing the Cr-deficiency in the CuCr1 − x O2 system. By optimising processing parameters, the electrical conductivity of a CuCr1 − x O2 thin film was 8.30 S/cm (x = 0.00) and this increased with the introduction of Cr-deficiency to 21.03 S/cm (x = 0.03) with a mean optical transmittance of 60%. The bandgaps of the thin films ranged from approximately 3.00 to 3.22 eV.
Starting Page	854
Ending Page	857
Page Count	4
Volume Number	9
e-ISSN	17500443
Issue Number	Issue 12, Dec (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/9/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2014.0385
Journal	Micro & Nano Letters
Publisher Date	2014-10-23
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Al2O3 Bandgaps C-sapphire Single-crystal Substrate Copper Compounds Cr-deficiency Cr-stoichiometry Effects Crystallinity CuCr1−xO2 Delafossite-type Thin Films Electrical Conductivity Electrical Property of Insulators (thin Films/low-dimensional Structures) Electronic Structure of Crystalline Semiconductor Compound Energy Gap Epitaxy Glass Substrate Growth Temperature Effect Inorganic SemiConductor And Insulator Insulator Mean Optical Transmittance Optical Property Oxygen Partial Pressure Processing Parameter Pulsed Laser Deposition SiO2 Stoichiometry Structural Property Structure Substrate Temperature Thin Film Thin Film Growth
Content Type	Text
Resource Type	Article

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