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| Content Provider | IET Digital Library |
|---|---|
| Author | Cui, Hao Park, Si Hyun |
| Abstract | Numerical simulations are performed to investigate the light-extraction efficiencies (LEEs) of gallium nitride-based light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs), using the three-dimensional finite-difference time-domain method. PSSs with hexagonal arrays of cone-shaped patterns were used, and the pitch of the pattern array, pattern fill factor and pattern height were varied from nanoscale to microscale. The relative LEE for each PSS-LED was calculated, and the geometrical parameters were analysed for optimised light extraction enhancement of the PSS-LEDs. |
| Starting Page | 841 |
| Ending Page | 844 |
| Page Count | 4 |
| Volume Number | 9 |
| e-ISSN | 17500443 |
| Issue Number | Issue 12, Dec (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/9/12 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2014.0373 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2014-09-17 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Al2O3 Cone-shaped Pattern Design And Testing Equivalent Circuit Finite Difference Time-Domain Analysis Gallium Compound Gallium Nitride-based Light-emitting Diode GaN Geometrical Parameter Hexagonal Array III-V SemiConductor LED Light Emitting Diode Light-extraction Efficiency Micropatterned Sapphire Substrates Nanopatterned Sapphire Substrates Numerical Simulation Pattern Array Pitch Pattern Fill Factor Pattern Height Semiconductor Device Model Semiconductor Device Modelling Three-dimensional Finite-difference Time-domain Method Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
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