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| Content Provider | IET Digital Library |
|---|---|
| Author | Ashok, Akarapu Pal, Prem |
| Abstract | In this reported work, silicon dioxide (SiO2) thin films have been developed at room temperature using anodic oxidation of silicon. The effect of various process parameters on oxide properties including thickness, surface morphology, roughness and so on are investigated to determine the optimal conditions for the growth of SiO2 for applications in microelectromechanical systems (MEMS). A spectroscopic ellipsometry was used to characterise the refractive index and thickness of the as-deposited films. Atomic force microscopy was employed to measure the surface roughness of the oxide films. To fabricate the overhanging micromechanical structures, the etch rate of the as-grown oxide film was studied in 25 wt% tetramethylammonium hydroxide and 10 wt% potassium hydroxide solutions at different temperatures. Finally, the as-grown oxide film is demonstrated for the fabrication of differently shaped MEMS components using an etchant showing minimum oxide etch rate. |
| Starting Page | 830 |
| Ending Page | 834 |
| Page Count | 5 |
| Volume Number | 9 |
| e-ISSN | 17500443 |
| Issue Number | Issue 12, Dec (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/9/12 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2014.0360 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2014-11-06 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Anodic Oxidation Anodic Silicon Dioxide Thin Films Anodisation Atomic Force Microscopy Condensed Matter Corrosion Epitaxy Etch Rate Etchant Etching Fabrication of MEMS And NEMS Device Film Thickness Fourier Transform Spectra Infrared And Raman Spectra in Inorganic Crystal Infrared Spectra Inorganic SemiConductor And Insulator MEMS Component Microelectromechanical System Application Microfabrication Micromechanical And Nanomechanical Device And System Micromechanical Device Micromechanical Structure Optical Constants And Parameter Optical Property Other Surface Treatments Oxidation Oxide Property Potassium Hydroxide Solutions Refractive Index Silicon Compound SiO2 Solid Surface Structure Spectroscopic Ellipsometry Structure Surface Modulator/Detector Array Surface Resistance Measurement Temperature 293 K to 298 K Tetramethylammonium Hydroxide Thin Film Thin Film Device Thin Film Growth |
| Content Type | Text |
| Resource Type | Article |
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