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| Content Provider | IET Digital Library |
|---|---|
| Author | An, Kun Zhang, Hui Chou, Xiujian Xue, Chenyang Zhang, Wendong |
| Abstract | A Pb0.97La0.02(Zr0.95Ti0.05)O3 anti-ferroelectric thick-film micro-cantilever applying micro-machining technology based silicon was designed and fabricated to meet the requirements of high-frequency vibration energy application. The anti-ferroelectric cantilevers showed the high-frequency vibration characteristics with the strain generated due to the anti-ferroelectric–ferroelectric transformation. The maximum vibration velocity and displacement of the cantilever tip of 600 μm (L) × 60 μm (W) × 10 μm (H) were 4.22 m/s and 23.5 μm. The first response frequency was up to 28.6 kHz at 42 V transitions voltage induced when the anti-ferroelectric material layer was strained, significantly larger than the typical piezoelectric cantilevers. The five-size different cantilevers fabricated in one chip had mostly the same sharp voltage, owing to the same thickness of anti-ferroelectric material layer. The vibration frequency increased with the decrease of the cantilever length, while the vibration velocity and displacement had the opposite trends. It can be seen that the silicon-based anti-ferroelectric cantilever with a high vibration frequency shows a more incomparable vibration than other cantilevers of other materials, which can be regarded as a new direction for micro-electro-mechanical system vibration devices. |
| Starting Page | 803 |
| Ending Page | 806 |
| Page Count | 4 |
| Volume Number | 11 |
| e-ISSN | 17500443 |
| Issue Number | Issue 12, Dec (2016) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/11/12 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2016.0313 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2016-12-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Antiferroelectric Materials Antiferroelectric Thick Films Antiferroelectric-ferroelectric Transformation Cantilever Length Cantilever Tip Displacement Cantilevers Design And Modelling of MEMS And NEMS Device Dielectric Thin Films Distance 23.5 Mum Fabrication of MEMS And NEMS Device Ferroelectric Thin Film Ferroelectric Transitions Ferroelectric Transitions And Curie Point Frequency 28.6 KHz High-frequency Vibration Energy Lanthanum Compound Lead Compound Material For MEMS And NEMS Device Technology Microcantilever Microelectromechanical System Vibration Device Micromachining Micromechanical And Nanomechanical Device And System Micromechanical Device Pb0.97La0.02(Zr0.95Ti0.05)O3 Piezoelectric And Ferroelectric Material Piezoelectric Cantilevers Response Frequency Velocity 4.22 M/s Vibration Frequency Vibration Velocity Vibrations Voltage 42 V |
| Content Type | Text |
| Resource Type | Article |
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