NDLI: Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

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Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

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Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Content Provider	IET Digital Library
Author	Zhou, Qi Liu, Li Zhou, Xingye Zhang, Anbang Shi, Yuanyuan Wang, Zeheng Wang, Yuan Gang Fang, Yulong Lv, Yuanjie Feng, Zhihong Zhang, Bo
Abstract	A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al2O3/III-nitride (MIS) gated hybrid anode (MG-HAD) is experimentally demonstrated. The forward turn-on voltage of the MG-HAD is determined by the threshold-voltage of the 2DEG channel beneath the recessed MIS-gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate recessing. The optimal trench depth of the MIS-gate for zero-bias detection was designed and experimentally determined to be ∼23 nm, which enables a high-curvature coefficient of 78 V−1 at zero bias. The first-order voltage sensitivity, β V, is as high as 7.8 mV/μW. To the best of the authors' knowledge, these values are the highest reported for GaN-based zero-bias detectors to date.
Starting Page	1889
Ending Page	1891
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 23, Nov (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/23
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.2885
Journal	Electronics Letters
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	2DEG Channel Al2O3 AlGaN-GaN Aluminium Compound Anode Device Nonlinearity First-order Voltage Sensitivity Gallium Compound Gate Recessing High-sensitivity Zero-bias Microwave Detector III-V SemiConductor Junction And Barrier Diode Lateral Diode MG-HAD Microwave Circuit And Device Microwave Detector Microwave Measurement Technique MIS Device MIS-gated Hybrid Anode Semiconductor Diode Sensing Device And Transducers Sensitivity Analysis Silicon Threshold-voltage Turn-on Voltage Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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