NDLI: Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement

Content Provider	IET Digital Library
Author	Zhou, Qi Yang, Xiu Zhu, Liyang Chen, Kuangli Han, Xiaoqi Luo, Zhihua Zhou, Chunhua Chen, Wanjun Zhang, Bo
Abstract	A novel ultrathin barrier AlGaN/GaN hybrid-anode-diode (UTB-HAD) with in-situ Si3N4-cap passivation is experimentally demonstrated. The forward turn-on voltage (V on) of the UTB-HAD is determined by the intrinsic threshold voltage of the two-dimension electron gas (2DEG) channel, which can be precisely controlled by tailoring the as-grown AlGaN-barrier thickness. The typical V on as low as 0.48 V is obtained by using the UTB AlGaN/GaN with a barrier thickness of 4.9 nm. The MOCVD has grown in-situ Si3N4-cap and the LPCVD-Si3N4 bilayer passivation stack is developed to effectively restore the 2DEG in the UTB AlGaN/GaN heterostructure and simultaneously improve the dynamic characteristics of the diode. The UTB-HAD and the novel passivation scheme are of great potential for power applications.
Starting Page	789
Ending Page	791
Page Count	3
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 15, Jul (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/15
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.0432
Journal	Electronics Letters
Publisher Date	2020-05-27
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlGaN-barrier Thickness AlGaN-GaN-Si3N4 Aluminium Compound Chemical Vapour Deposition Dynamic Characteristic Improvement Forward Turn-on Voltage Gallium Compound III-V SemiConductor Intrinsic Threshold Voltage Junction And Barrier Diode LPCVD-Si3N4 Bilayer Passivation Stack MOCVD MOCVD In-situ Si3N4-cap Passivation Passivation Semiconductor Diode Semiconductor Heterojunction Semiconductor Technology Silicon Compound Size 4.9 Nm Surface Topography Measurement Two-dimension Electron Gas Channel Two-dimensional Electron Gas Ultrathin Barrier AlGaN-GaN Hybrid-anode-diode UTB AlGaN-GaN Heterostructure UTB-HAD Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

HAD fabricated on UTB AlGaN/GaN heterostructure for high-sensitivity zero-bias microwave detection

Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Simulation study of high-reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode

Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄ as Gate Dielectric and Passivation Layer

Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement

Similar Documents

HAD fabricated on UTB AlGaN/GaN heterostructure for high-sensitivity zero-bias microwave detection

Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Simulation study of high-reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode

Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄ as Gate Dielectric and Passivation Layer