NDLI: Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

Content Provider	IEEE Xplore Digital Library
Author	Qi Zhou Yang Jin Jingyu Mou Xu Bao Yijun Shi Zhaoyang Liu Jian Li Wanjun Chen Chongwen Sun Bo Zhang
Copyright Year	2015
Description	Author affiliation: State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China (Qi Zhou; Yang Jin; Jingyu Mou; Xu Bao; Yijun Shi; Zhaoyang Liu; Jian Li; Wanjun Chen; Chongwen Sun; Bo Zhang)
Abstract	An AlGaN/GaN lateral power diode on Si substrate with recessed $Metal/Al_{2}O_{3}/III-Nitride$ (MIS) Gated hybrid anode (MG-HAD) for improved forward conduction and reverse blocking has been realized. The low turn-on voltage of 0.6 V with good uniformity for the fabricated 189 devices is obtained. In comparison with the conventional device, the forward current at 2 V was increased by 5 times that leading to a 51% reduction in specific ON-resistance (RON, SP). The incorporation of high-k dielectric in the recessed gate region enabling 2-order lower reverse leakage comparing with the conventional device, leading to a high breakdown voltage over 1.1 kV at leakage current as low as 10 μA/mm in the MG-HAD with anode-to-cathode distance $(L_{D})$ of 20 μm. The strong reverse blocking over 600 V was still achieved at 150 °C. The proposed diode is compatible with GaN normally-off MIS high-electron-mobility transistors (MISHEMTs), revealing its great potential for highly efficient GaN-on-Si power ICs.
Starting Page	369
Ending Page	372
File Size	366404
Page Count	4
File Format	PDF
ISBN	9781479962594
ISSN	1943653X
e-ISBN	9781479962617
DOI	10.1109/ISPSD.2015.7123466
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-10
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Schottky diodes Aluminum gallium nitride Wide band gap semiconductors Substrates Anodes Leakage currents high temperature GaN diode hybrid anode high breakdown voltage low turn-on voltage
Content Type	Text
Resource Type	Article

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