NDLI: High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Content Provider	IEEE Xplore Digital Library
Author	Qi Zhou Yang Jin Yuanyuan Shi Jinyu Mou Xu Bao Bowen Chen Bo Zhang
Copyright Year	1980
Abstract	An AlGaN/GaN-on-Si lateral power diode with recessed metal/Al₂O₃/III-nitride (MIS)-gated ohmic anode for improved forward conduction and reverse blocking has been realized. The low onset voltage of ~0.6 V with good uniformity for the fabricated 189 devices is obtained. In comparison with the conventional Schottky diode the specific ON-resistance (R_ON,SP) was reduced by 51% in a device with anode-to-cathode spacing (L_AC) of 5 μm. The incorporation of high-k dielectric in the recessed gate region enabling two-order lower reverse leakage comparing with the conventional device, leading to a high breakdown voltage over 1.1 kV at leakage current as low as 10 μA/mm in device with L_AC=20μm. The strong reverse blocking over 600 V was still achieved at 150°C. The proposed diode is compatible with GaN normally OFF MIS high-electron-mobility transistors, revealing its potential for highly efficient GaN-on-Si power ICs.
Sponsorship	IEEE Electron Devices Society
Starting Page	660
Ending Page	662
Page Count	3
File Size	852044
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Schottky diodes Aluminum gallium nitride Logic gates Temperature measurement Anodes HEMTs power devices AlGaN/GaN diode high breakdown voltage low onset voltage hybrid anode
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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