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| Content Provider | IET Digital Library |
|---|---|
| Author | Wang, Zeheng Wang, Fangzhou Guo, Songnan Wang, Zirui |
| Abstract | In this study, a novel AlGaN/GaN power rectifier with an integrated lateral composite buffer diode (IBD-Rectifier) for reverse blocking capability improvement is proposed and investigated by Sentaurus simulations (this paper includes only simulated data and no real experimental result). AlGaN buffer layer under the anode is adopted to realise great high reverse blocking capability. A minimum turn-on voltage of 0.6 V and a maximum breakdown voltage (BV) >1.3 kV are simultaneously obtained in the IBD-Rectifier, resulting in a high Baliga's figure of merits BV 2/R on,sp (R on,sp is specific-on resistance) of ∼3000 MW/cm2. In comparison with MIS-gated hybrid anode diode and conventional schottky barrier diode, the IBD-Rectifier delivers an excellent theoretical method to achieve superior performances in high-efficiency GaN power applications. |
| Starting Page | 660 |
| Ending Page | 663 |
| Page Count | 4 |
| Volume Number | 12 |
| e-ISSN | 17500443 |
| Issue Number | Issue 9, Sep (2017) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/12/9 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0057 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2017-09-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | AlGaN-GaN Aluminium Compound Anode Buffer Layer Composite Material Dielectric Breakdown And Discharges Electric Breakdown Gallium Compound High Baliga Figure of Merit High-reverse Blocking Power Rectifier IBD-rectifier III-V SemiConductor Integrated Lateral Composite Buffer Diode Junction And Barrier Diode Maximum Breakdown Voltage MIS-gated Hybrid Anode Diode Power Electronics Power Engineering Computing Power Semiconductor Device Power Semiconductor Diode Power Supply Rectifier Rectifying Circuit Schottky Barrier Diode Sentaurus Simulation Supervisory Circuit Voltage 0.6 V Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
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