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| Content Provider | IET Digital Library |
|---|---|
| Author | Zhou, Q. Chen, W. Zhou, C. Zhang, B. Chen, K. J. |
| Abstract | High sensitivity AlGaN/GaN lateral field-effect rectifiers (L-FERs) were realised that can be monolithically integrated with AlGaN/GaN high electron mobility transistors (HEMTs) circuitry. F− ion plasma treatment was optimised to achieve strong nonlinearity of the L-FER at zero-bias. The L-FER treated by F− ion plasma at 120 W for 200 s exhibits a record level zero-biased curvature coefficient, γ, of 69 V−1 at room temperature. The direct-measured voltage sensitivity is as high as 6.75 mV/μW at 2 GHz. The high sensitivity and AlGaN/GaN HEMTs compatibility of the L-FER make them very promising for zero-bias square-law detector applications. |
| Starting Page | 1391 |
| Ending Page | 1393 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 49 |
| e-ISSN | 1350911X |
| Issue Number | Issue 22, Oct (2013) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/49/22 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2013.2506 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | AlGaN-GaN Aluminium Compound Direct-measured Voltage Sensitivity Field Effect Integrated Circuit Frequency 2 GHz Gallium Compound HEMT Circuitry HEMT Integrated Circuit High Electron Mobility Transistors III-V SemiConductor Ion Plasma Treatment L-FER Lateral Field-effect Rectifier Power 120 W Power Electronics Power Supply Rectifier Supervisory Circuit Time 200 S Wide Band Gap SemiConductor Zero-bias Microwave Detection Zero-bias Square-law Detector Application Zero-biased Curvature Coefficient |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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