NDLI: Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor

Content Provider	IET Digital Library
Author	Wu, Wen Hao Lin, Yueh Chin Hou, Tzu Ching Lin, Tai Wei Hsu, Hisang Hua Wong, Yuen Yee Iwai, Hiroshi Kakushima, Kuniyuki Chang, Edward Yi
Abstract	The use of a high k composite dielectric composed of La2O3 and HfO2 layers as the gate dielectric for In0.53Ga0.47As MOS application is proposed. Two multi-layer structures of La2O3 (1 nm)/HfO2 (1 nm) and La2O3 (0.5 nm)/HfO2 (0.5 nm) were deposited and annealed at 450 and 500°C for device performance comparison. X-ray photoelectron spectroscopy, TEM and C–V measurements were used for the interface analysis between the oxide and the semiconductor. Finally, a 1 nm equivalent-oxide-thickness dielectric with small hysteresis of 88 mV and D it of 1.9 × 1012 cm−2 eV−1 was achieved for six layers of an La2O3 (0.5 nm)/HfO2 (0.5 nm) composite oxide structure on an In0.53Ga0.47As MOS capacitor with a post-deposition annealing temperature of 450°C.
Starting Page	59
Ending Page	61
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 1, Jan (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.1087
Journal	Electronics Letters
Publisher Date	2015-11-25
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Annealing Processes Annealing Processes in Semiconductor Technology Capacitor Composite Material Composite Oxide Structure Current Measurement C–V Measurements Dielectric Material Dielectric Material And Property Electric Current Measurement Equivalent-oxide-thickness Dielectric Gate Dielectric Hafnium Compound High K Composite Dielectric Hysteresis III-V SemiConductor In0.53Ga0.47As Indium Compound Interface Analysis La2O3-HfO2 Lanthanum Compound MOS Capacitor Multilayer Composite Oxides Photoelectron Spectroscopy Post-deposition Annealing Temperature Size 0.5 Nm Size 1 Nm TEM Temperature 450 DegC Temperature 500 DegC Transmission Electron Microscopy Voltage Measurement X-Ray Photoelectron Spectroscopy X-Ray Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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