NDLI: Investigation of LaAlO3/ZrO2/a-InGaZnO thin-film transistors using atmospheric pressure plasma jet

Content Provider	IET Digital Library
Author	Wu, Chien Hung Huang, Hau Yuan Wang, Shui Jinn Chang, Kow Ming Hsu, Hsin Yu
Abstract	Amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO-TFTs) with the LaAlO3/ZrO2 gate dielectric stack employing a novel atmospheric pressure plasma jet process that results in small subthreshold swing and low threshold voltage are proposed and fabricated. The influence of post-deposition annealing (PDA) temperature on LaAlO3/ZrO2 gate dielectric stack and device performance was investigated. The equivalent oxide thickness of the LaAlO3/ZrO2 dielectric stack decreases from 11.5 nm without annealing to 7 nm after a 500°C annealing was applied. The LaAlO3/ZrO2/a-InGaZnO TFT with a 500°C annealing exhibits a small subthreshold swing of 77 mV·dec−1, a high field-effect mobility of 9 cm2·V−1·s−1 and an excellent current ratio of 1.8 × 107, which could be attributed to the improved gate dielectric quality by the PDA. The LaAlO3/ZrO2/a-InGaZnO TFTs with excellent gate control ability allow the device to operate at a low operating voltage with low power consumption.
Starting Page	706
Ending Page	708
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 9, Apr (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/9
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.0816
Journal	Electronics Letters
Publisher Date	2014-04-22
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amorphous Semiconductors Annealing Processes Annealing Processes in Semiconductor Technology APPJ Atmospheric Pressure Plasma Jet Dielectric Device Dielectric Material Equivalent Oxide Thickness Field Effect Device Field Effect Transistors Gallium Compound Gate Control High Field-effect Mobility Improved Gate Dielectric Stack Quality Indium Compound LaAlO3-ZrO2-InGaZnO Lanthanum Compound Other Dielectric Application And Device PDA Temperature Plasma Jets Post-deposition Annealing Temperature Power Consumption Size 11.5 Nm Size 7 Nm Subthreshold Swing Temperature 500 DegC Ternary SemiConductor TFT Thin Film Transistors Thin-film Transistor Zirconium Compound
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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